Semiconductor device
AssigneeOki Semiconductor Co., Ltd.
InventorDaisuke INOMATA
Life of this patent
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Abstract
A semiconductor device having a structure that can reduce stress due to difference in coefficients of thermal expansion and prevent or suppress generation of cracks, and a semiconductor device manufacturing method, are provided. The semiconductor device includes a single crystal silicon substrate having a main face on which semiconductor elements are formed and a side face intersecting with the main face, and a sealing resin provided covering at least a portion of the side face. The side face covered by the sealing resin is equipped with a first face with a plane direction forming an angle of −5° to +5° to the plane direction of the main face.
Claims18
A semiconductor device comprising:
- a single crystal semiconductor substrate, having a main face on which semiconductor elements are formed, and a side face intersecting with the main face;
- and
- a first insulator provided to cover at least a portion of the side face,
- wherein the side face covered by the first insulator comprises a first face with a plane direction forming an angle of between −5° and +5° to the plane direction of the main face.
Dependencies are inferred from the claim text.