Semiconductor package having through electrodes that reduce leakage current and method for manufacturing the same

A method for manufacturing a semiconductor package, the method comprising:

• forming through-electrodes that pass through a first surface and second surface, facing away from the first surface, of the semiconductor chip;
• forming first polarized parts onto ends of the through-electrodes that corresponds to at least one of the first surface and the second surface and second polarized parts onto the at least one of the first surface and the second surface excluding the first polarized parts, the second polarized parts having a polarity opposite to that of the first polarized parts;
• forming a current leakage prevention layer on the second polarized parts using a current leakage prevention substance that reacts with the second polarized parts;
• and
• forming connection members onto at least one ends of the through-electrodes.