Method of manufacturing a semiconductor device
AssigneeInfineon Technologies AG
InventorsThomas Wowra, Joachim Mahler, Manfred Mengel
Life of this patent
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Abstract
The method comprises providing multiple chips attached to a first carrier, stretching the first carrier so that the distance between adjacent ones of the multiple chips is increased, and applying a laminate to the multiple chips and the stretched first carrier to form a first workpiece embedding the multiple chips, the first workpiece having a first main face facing the first carrier and a second main face opposite to the first main face.
Claims25
A method of manufacturing a semiconductor device, comprising:
- providing multiple chips attached to a first carrier;
- stretching the first carrier so that the distance between adjacent ones of the multiple chips is increased;
- and
- applying a laminate to the multiple chips and the stretched first carrier to form a first workpiece having a first main face facing the first carrier and a second main face opposite to the first main face.
A method of manufacturing a semiconductor device, comprising:
- providing a semiconductor wafer comprising multiple chips;
- attaching the wafer to a first carrier;
- structuring the semiconductor wafer to produce separated multiple chips;
- and
- stretching the first carrier so that the distance between adjacent ones of the multiple chips is increased.
A semiconductor device, comprising:
- a semiconductor chip comprising electrical contact elements on a surface of the chip,
- a resin coated copper layer comprising a resin layer applied to a copper layer, wherein
- the semiconductor chip is covered by the resin layer and the copper layer comprises electrically conductive areas, each one of the contact areas being electrically connected with one of the contact elements of the chip.
The semiconductor device according to claim 27, wherein
- a contact metallization is provided in between each one of the contact elements and the respective conductive area.
The semiconductor device according to claim 27, wherein
- the resin layer comprises a first surface and a second surface opposite to the first surface,
- the conductive areas are applied to the first surface of the resin layer, and
- the conductive areas are each connected to an electrical connection, respectively, the electrical connection reaching from the first surface of the resin layer to the second surface of the resin layer.
A semiconductor device, comprising:
- a semiconductor chip comprising contact elements on a surface of the chip,
- a material layer covering the semiconductor chip,
- electrically conductive areas applied to a first surface of the material layer, each one of the electrically conductive areas being electrically connected with one of the contact elements of the chip,
- each one of the conductive areas comprising a first surface and a second surface opposite to the first surface, wherein the first surface is applied to the first surface of the material layer and the second surface is situated remote from the material layer and wherein the first surface has a surface roughness which is higher than the surface roughness of the second surface.
The semiconductor device according to claim 30, wherein
- a contact metallization is provided in-between each one of the contact elements and the respective conductive area.
The semiconductor device according to claim 30, wherein
- the material layer further comprises a second surface, and
- the conductive areas are each connected to an electrical connection, respectively, the electrical connection reaching from the first surface of the material layer to the second surface of the material layer.
Dependencies are inferred from the claim text.