Silicon epitaxial wafer and method for production thereof
AssigneeSumco Corporation
InventorsMasayuki Ishibashi, Shinji Nakahara, Tetsuro Iwashita
Life of this patent
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Abstract
Disclosed is a wafer having a good haze level in spite of the fact that the inclination angle of {110} plane in the wafer is small. Also disclosed is a method for producing a silicon epitaxial wafer, which comprises the steps of: growing an epitaxial layer on a silicon single crystal substrate having a main surface of {110} plane of which an off-angle is less than 1 degree; and polishing the surface of the epitaxial layer until the surface of the epitaxial layer has a haze level of 0.18 ppm or less (as measured by SP2 at a DWO mode).
Claims12
A method for producing a silicon epitaxial wafer, comprising;
- growing an epitaxial layer on a silicon single crystal substrate having a main surface of {110} plane of which an off-angle is less than one degree;
- and
- polishing a surface of the epitaxial layer until a haze level at the surface of the epitaxial layer becomes to be 0.18 ppm or less (as measured by SP2 in a DWO mode).
A method for producing a silicon epitaxial wafer, comprising;
- growing an epitaxial layer on a silicon single crystal substrate having a main surface of {110} plane of which an off-angle is less than one degree;
- and
- polishing a surface of the epitaxial layer until root-mean-square RMS of a surface roughness at the surface of the epitaxial layer becomes to be 0.060 nm or less (as measured by an atomic force microscope AFM at an area of 10 μm square).
A silicon epitaxial wafer comprising a silicon single crystal substrate having a main surface of {110} plane and an epitaxial layer grown on the silicon single crystal substrate, wherein:
- an off-angle of a silicon single crystal substrate to be grown thereon with the epitaxial layer is less than one degree;
- and
- a haze level at a surface of the epitaxial layer is 0.18 ppm or less (as measured by SP2 in a DWO mode).
A silicon epitaxial wafer comprising a silicon single crystal substrate having a main surface of {110} plane and an epitaxial layer grown on the silicon single crystal substrate, wherein:
- an off-angle of a silicon single crystal substrate to be grown thereon with the epitaxial layer is less than one degree;
- and
- a surface roughness RMS at a surface of the epitaxial layer is 0.060 nm or less (as measured by an atomic force microscope AFM at an area of 10 μm square).
A silicon epitaxial wafer comprising a silicon single crystal substrate having a main surface of {110} plane and an epitaxial layer grown on the silicon single crystal substrate, wherein
- a haze level at a surface of the epitaxial layer is 0.18 ppm or less (as measured by SP2 in a DWO mode), and root-mean-square RMS of a surface roughness at a surface of the epitaxial layer is 0.060 nm or less (as measured by an atomic force microscope AFM at an area of 10 μm square).
A method for producing a silicon epitaxial wafer, comprising;
- growing an epitaxial layer on a silicon single crystal substrate using an epitaxial apparatus;
- and
- polishing a wafer after having completed the growing and taken off from the epitaxial apparatus, wherein
- the polishing is performed until 10 hours elapse after taking off the wafer.
A method for producing a silicon epitaxial wafer, comprising;
- growing an epitaxial layer on a silicon single crystal substrate;
- and
- polishing concurrently both surfaces of the substrate.
Dependencies are inferred from the claim text.