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US 2011/0031589 A1Published application
Group iii nitride substrate, semiconductor device comprising the same, and method for producing surface-treated group iii nitride substrate
AssigneeSumitomo Electric Industries, Ltd.
InventorKeiji Ishibashi
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Abstract
A group III nitride substrate in one embodiment has a surface layer. The surface layer contains 3 at. % to 25 at. % of carbon and 5×1010 atoms/cm2 to 200×1010 atoms/cm2 of a p-type metal element. The group III nitride substrate has a stable surface.
Claims4
A group III nitride substrate, comprising a surface layer, wherein
- the surface layer contains carbon of 3 at. % to 25 at. % and a p-type metal element of 5×1010 atoms/cm2 to 200×1010 atoms/cm2.
A method for manufacturing a surface-treated group III nitride substrate, comprising:
- dry etching a surface of the substrate using a mixed gas that contains a first gas including carbon and a second gas including chlorine, in a chamber, wherein a pressure P (Pa), a flow rate Q (sccm) of the mixed gas, and a chamber volume V (1:
- liters) satisfy
- 0.05≦PV/Q≦3.0,
- and a flow ratio between the first gas and the second gas is from 1:9 to 9:1;
- and
- polishing the surface of the substrate using a polishing apparatus in which a solution containing an oxide of a p-type metal element and having a viscosity ranging from 2 (mPa·s) to 30 (mPa·s) is supplied as a slurry, to bond the p-type metal element to the surface of the substrate.
3 more elements
Dependencies are inferred from the claim text.