Method for manufacturing non-volatile semiconductor memory device, and non-volatile semiconductor memory device
AssigneeRenesas Electronics Corporation
InventorShu SHIMIZU
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Abstract
An isolation oxide film whose upper surface is higher than a surface of a substrate is formed in the substrate. A silicon oxide film is formed on the substrate between the isolation oxide films. A self-aligned polysilicon film is formed on the silicon oxide film between the isolation oxide films. After forming a resist pattern covering the peripheral circuitry, the isolation oxide films in the memory cell are etched by a predetermined thickness. An ONO film is formed on the entire surface of the substrate, a second resist pattern covering the memory cell is formed. Then, the ONO film, the polysilicon film 8 and the silicon oxide film 7 are removed from the peripheral circuitry.
Claims3
1-7. (canceled)
A non-volatile semiconductor memory device having a memory cell and peripheral circuitry adjacent to the memory cell, comprising:
- element isolation structures for isolating active regions in a substrate;
- and
- semiconductor elements formed on the active regions,
- wherein the active regions of the memory cell include:
- a plurality of rectangular first active regions arrayed in the lateral direction;
- and
- second active regions connecting ends of the first active regions to each other, the second active regions surrounding the memory cell, and
- wherein an upper surface of the element isolation structure in the memory cell has a height lower than a height of an upper surface of the element isolation structure in the peripheral circuitry.
Dependencies are inferred from the claim text.