Semiconductor photodiode device and manufacturing method thereof
AssigneeHitachi, Ltd.
InventorsMakoto MIURA, Shinichi Saito, Youngkun Lee, Katsuya Oda
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Abstract
A semiconductor photodiode includes a semiconductor substrate; a first conduction type first semiconductor layer formed above the semiconductor substrate; a high resistance second semiconductor layer formed above the first semiconductor layer; a first conduction type third semiconductor layer formed above the second semiconductor layer; and a second conduction type fourth semiconductor layer buried in the second semiconductor layer, in which the fourth semiconductor layer is separated at a predetermined distance in a direction horizontal to the surface of the semiconductor substrate.
Claims18
A semiconductor photodiode device comprising:
- a semiconductor substrate;
- a first conduction type first semiconductor layer formed above the semiconductor substrate;
- a high resistance second semiconductor layer formed above the first semiconductor layer;
- a first conduction type third semiconductor layer formed above the second semiconductor layer;
- and
- a second conduction type fourth semiconductor layer buried in the second semiconductor layer,
- wherein the fourth semiconductor layer is separated at a predetermined distance in a direction horizontal to the surface of the semiconductor substrate.
A method of manufacturing a semiconductor photodiode device, comprising the steps of:
- epitaxially growing a first conduction type first semiconductor layer above a semiconductor substrate;
- epitaxially growing a high resistance second semiconductor layer above the first semiconductor layer;
- applying patterning with an insulating film above the second semiconductor layer and epitaxially growing a second conduction type fourth semiconductor layer selectively;
- etching to remove the insulating film;
- epitaxially growing the second semiconductor layer again above the fourth semiconductor layer;
- and
- epitaxially growing the a first conduction type third semiconductor layer above the second semiconductor layer.
A method of manufacturing a semiconductor photodiode device, comprising the steps of:
- epitaxial growing a first conduction type first semiconductor layer above a semiconductor substrate;
- epitaxially growing a high resistance second semiconductor layer above the first semiconductor layer;
- applying patterning on the second semiconductor layer and forming a second conduction type fourth semiconductor layer in the second semiconductor layer by an ion implantation method;
- epitaxially growing the second semiconductor layer again above the second semiconductor layer;
- and
- epitaxially growing a first conduction type third semiconductor layer above the second semiconductor layer.
Dependencies are inferred from the claim text.