Solid-state imaging device and manufacturing method thereof

A method of manufacturing a solid-state imaging device comprising:

• forming a second-conductive semiconductor layer on a first-conductive semiconductor layer;
• forming an opening to surround a predetermined region of the second-conductive semiconductor layer in an in-plane direction of the second-conductive semiconductor layer;
• forming a hollow by sealing the opening through a thermal treatment to the second-conductive semiconductor layer in a non-oxidative atmosphere;
• forming a pattern in which a region corresponding to the hollow is open on the second-conductive semiconductor layer;
• forming an element isolation unit by performing an ion implantation of a first-conductive ion on the second-conductive semiconductor layer with the pattern as a mask;
• and
• forming a light receiving element on the second-conductive semiconductor layer surrounded by the element isolation unit and the hollow in the in-plane direction of the second-conductive semiconductor layer.