Solid-state image sensor

A solid-state image sensor, comprising:

• first and second pixels formed on a semiconductor substrate, wherein
• the first pixel includes
• a first photoelectric conversion region located in an upper portion of the semiconductor substrate and configured to generate charge by photoelectric conversion,
• a first transfer electrode located at a side of the first photoelectric conversion region and on the semiconductor substrate,
• a light-shield film covering the first transfer electrode and having a first opening on the first photoelectric conversion region, and
• a first anti-reflection film located on the first photoelectric conversion region and, when viewed in plan, within the first opening so as not to overlap the first light-shield film, and
• the second pixel includes
• a second photoelectric conversion region located in an upper portion of the semiconductor substrate and configured to generate charge by photoelectric conversion,
• a second transfer electrode located at a side of the second photoelectric conversion region and on the semiconductor substrate,
• the light-shield film covering the second transfer electrode and having a second opening on the second photoelectric conversion region, and
• a second anti-reflection film located on the second photoelectric conversion region and continuously extending to a portion on the second transfer electrode.