Solid-state imaging device, imaging apparatus, and manufacturing method of solid-state imaging device

A manufacturing method of a solid-state imaging device, comprising:

• a first step of forming, in a semiconductor substrate, a first well layer having a conductivity type that is opposite to a conductivity type of the semiconductor substrate and a second well layer having the conductivity type that is opposite to the conductivity type of the semiconductor substrate;
• a second step of forming, in the first well layer, photoelectric conversion elements and a reading unit for reading signals corresponding to charges generated in the respective photoelectric conversion elements;
• a third step, after the second step, of exposing portions of the second well layer by forming openings in a part, coextending with the second well layer, of a material layer that covers the semiconductor substrate;
• and
• a fourth step of forming a light shield layer by depositing a light shield material so that it comes into contact with the portions, exposed through the openings, of the second well layer and forming openings through the light shield material over the respective photoelectric conversion elements.