Solid-state imaging device, imaging apparatus, and manufacturing method of solid-state imaging device

A solid-state imaging device comprising:

• photodetection cells formed in a semiconductor substrate and comprising respective photodetection photoelectric conversion elements for detecting light coming form a subject;
• black level detection cells formed in the semiconductor substrate, for detecting a black level;
• and
• a light shield layer which is formed over an area where the photodetection cells and the black level detection cells are formed, has openings over the respective photodetection photoelectric conversion elements of the photodetection cells, has no openings over the black level detection cells, and has contact portions that are in contact with the semiconductor substrate, the contact portions being formed in spaces that are located outside the area where the black level detection cells are formed.

A manufacturing method of a solid-state imaging device, comprising:

• a first step of forming, in a semiconductor substrate, photodetection cells comprising respective photodetection photoelectric conversion elements for detecting light coming form a subject and black level detection cells for detecting a black level;
• a second step, after the first step, of forming openings through a material layer that covers the semiconductor substrate only in or in the vicinity of plan-view areas of the black level detection cells, respectively;
• and
• a third step of forming a light shield layer by depositing a light shield material so that it comes into contact with portions, exposed through the openings, of the semiconductor substrate and forming openings through the light shield material over the respective photoelectric conversion elements.

A manufacturing method of a solid-state imaging device, comprising:

• a first step of forming, in a semiconductor substrate, photodetection cells comprising respective photodetection photoelectric conversion elements for detecting light coming form a subject and black level detection cells for detecting a black level;
• a second step, after the first step, of forming openings through a material layer that covers the semiconductor substrate in spaces that are located outside the area where the black level detection cells are formed;
• and
• a third step of forming a light shield layer by depositing a light shield material so that it comes into contact with portions, exposed through the openings, of the semiconductor substrate and forming openings through the light shield material over the respective photoelectric conversion elements.