Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elements

A magnetic element for use in a magnetic device including a contact electrically coupled to the magnetic element, the magnetic element comprising:

• a first pinned layer;
• a tunneling barrier layer including crystalline MgO;
• a free layer having an out-of-plane demagnetization energy and a perpendicular magnetic anisotropy corresponding to a perpendicular anisotropy energy that is less than the out-of-plane demagnetization energy, the tunneling barrier layer residing between the first pinned layer and the free layer;
• and
• a perpendicular spacer layer adjoining the free layer, the free layer residing between the perpendicular spacer layer and the nonmagnetic spacer layer, the perpendicular spacer layer inducing at least a portion of the perpendicular magnetic anisotropy substantially without changing the in-plane anisotropy, the free layer and being nonmagnetic, the perpendicular spacer layer including doped crystalline MGO;
• a second pinned layer, the perpendicular spacer layer residing between the free layer and the second pinned layer;
• wherein the magnetic element is configured to allow the free layer to be switched between a plurality of stable magnetic states when a write current is passed through the magnetic element.

A magnetic memory comprising:

• a plurality of magnetic storage cells, each of the plurality of magnetic storage cells including a plurality of contacts and at least one magnetic element, each of the at least one magnetic element including a first pinned layer, a free layer, a nonmagnetic spacer layer between the first pinned layer and the free layer, a perpendicular spacer layer, and a second pinned layer, the perpendicular spacer layer residing between the free layer and the second pinned layer, the perpendicular spacer layer including at least one of a doped nitride layer and a doped oxide layer, the free layer having an out-of-plane demagnetization energy and a perpendicular magnetic anisotropy, the out-of-plane demagnetization energy being greater than the perpendicular anisotropy energy, the nonmagnetic spacer layer residing between the pinned layer and the free layer, the perpendicular spacer layer adjoining the free layer and inducing at least a portion of the perpendicular magnetic anisotropy in the free layer, the magnetic element being configured to allow the free layer to be switched between a plurality of stable magnetic states when a write current is passed through the magnetic element by the contacts;
• a plurality of word lines coupled with the plurality of magnetic storage cells;
• and
• a plurality of bit lines coupled with the plurality of storage cells.

A method for fabricating a magnetic element for use in a magnetic device including a contact electrically coupled to the magnetic element, the method comprising:

• providing a first pinned layer;
• providing a nonmagnetic spacer layer;
• providing a free layer having an out-of-plane demagnetization energy and a perpendicular magnetic anisotropy corresponding to a perpendicular anisotropy energy, the out-of-plane demagnetization energy being greater than the perpendicular anisotropy energy, the nonmagnetic spacer layer residing between the pinned layer and the free layer;
• and
• providing a perpendicular spacer layer adjoining the free layer, the perpendicular spacer layer inducing at least a portion of the perpendicular magnetic anisotropy in the free layer and including at least one of a doped nitride and doped MgO;
• wherein the magnetic element is configured to allow the free layer to be switched between a plurality of stable magnetic states when a write current is passed through the magnetic element.