Semiconductor devices in which a cell gate pattern and a resistor pattern are formed of a same material and methods of forming the same

A semiconductor device comprising:

• a semiconductor substrate comprising a cell region, a peripheral circuit region, and a resistor region, the cell region including an active region defined by a device isolation layer, the peripheral circuit region including an active region defined by the device isolation layer, and the resistor region including the device isolation layer;
• a cell gate structure disposed on the active region of the cell region, comprising a first insulating layer, a charge storage layer, a second insulating layer, and a cell gate pattern stacked sequentially;
• a peripheral circuit gate structure disposed on the active region of the peripheral circuit region, comprising a third insulating layer and a peripheral circuit gate pattern stacked sequentially;
• and
• a resistor structure disposed on the device isolation layer of the resistor region, comprising a resistor pattern;
• wherein the cell gate pattern and the resistor pattern comprise a same material;
• and
• wherein the peripheral circuit region and the resistor regions are spaced apart from the entire cell region, the cell region and the resistor region are spaced apart from the entire peripheral circuit region, and the cell region and the peripheral circuit region are spaced apart from the entire resistor region.