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AssigneeKabushiki Kaisha Toshiba
InventorsYosuke Komori, Hideaki Aochi, Ryota Katsumata, Masaru Kito, Yoshiaki Fukuzumi, Masaru Kidoh, Hiroyasu Tanaka, Megumi Ishiduki, Tomoko Fujiwara, Ryouhei Kirisawa, Yoshimasa Mikajiri, Shigeto Oota
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A nonvolatile semiconductor memory device includes: a stacked structural unit including a plurality of electrode films and a plurality of inter-electrode insulating films alternately stacked in a first direction; a first selection gate electrode stacked on the stacked structural unit in the first direction; a first semiconductor pillar piercing the stacked structural unit and the first selection gate electrode in the first direction; a first memory unit provided at an intersection of each of the electrode films and the first semiconductor pillar; and a first selection gate insulating film provided between the first semiconductor pillar and the first selection gate electrode, the first selection gate electrode including a first silicide layer provided on a face of the first selection gate electrode perpendicular to the first direction.
A nonvolatile semiconductor memory device comprising:
A method for manufacturing a nonvolatile semiconductor memory device,
Dependencies are inferred from the claim text.