Sensor element of a gas sensor
OwnerMarkus Widenmeyer, Dieter Elbeinventors
Life of this patent
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Abstract
A sensor element of a gas sensor for determining gas components in gas mixtures is provided, which includes a field-effect transistor having a source electrode, a drain electrode, and a gate electrode. The gate electrode includes a gate metallization, which is in contact with an insulation layer or a semiconductor substrate of the field-effect transistor via a boundary layer, the boundary layer being formed by modifying the surface of the insulation layer or the semiconductor substrate using metal alkoxides, metal amides, metal halogenides and/or metal alkyls. Furthermore, a method for producing said sensor element is provided.
Claims11
1-10. (canceled)
A sensor element of a gas sensor for determining gas components in a gas mixture, comprising:
- a field-effect transistor having a source electrode, a drain electrode and a gate electrode;
- wherein the gate electrode includes a gate metallization, which is in contact with one of an insulation layer and a semiconductor substrate of the field-effect transistor via a boundary layer, and
- wherein the boundary layer is formed by modifying the surface of one of the insulation layer and the semiconductor substrate using at least one of metal alkoxides, metal amides, metal halogenides, and metal alkyls.
A method for producing a sensor element for gas sensors for determining gas components in a gas mixture, the method comprising:
- integrating a boundary layer integrated in a gate electrode of a field-effect transistor;
- and
- forming the boundary layer by treating a surface of one of an insulation layer and a semiconductor substrate with at least one of a metal alkoxide, a metal amide, a metal halogenide, and a metal alkyl;
- wherein the sensor element includes the field-effect transistor having a source electrode, a drain electrode and a gate electrode, wherein the gate electrode includes a gate metallization, which is in contact with one of the insulation layer and the semiconductor substrate of the field-effect transistor via the boundary layer.
A sensor element of a gas sensor for determining gas components in a gas mixture of one of an internal combustion engine, a power plant, and a heating device, comprising:
- a field-effect transistor having a source electrode, a drain electrode and a gate electrode;
- wherein the gate electrode includes a gate metallization, which is in contact with one of an insulation layer and a semiconductor substrate of the field-effect transistor via a boundary layer, and
- wherein the boundary layer is formed by modifying the surface of one of the insulation layer and the semiconductor substrate using at least one of metal alkoxides, metal amides, metal halogenides, and metal alkyls.
A sensor element of a gas sensor for determining gas components in a gas mixture for one of monitoring an operability of a NOx storage catalyst and an SCR exhaust-gas aftertreatment system, comprising:
- a field-effect transistor having a source electrode, a drain electrode and a gate electrode;
- wherein the gate electrode includes a gate metallization, which is in contact with one of an insulation layer and a semiconductor substrate of the field-effect transistor via a boundary layer, and
- wherein the boundary layer is formed by modifying the surface of one of the insulation layer and the semiconductor substrate using at least one of metal alkoxides, metal amides, metal halogenides, and metal alkyls.
Dependencies are inferred from the claim text.