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US 2011/0031528 A1Published application
Semiconductor light emitting device
AssigneeSony Corporation
InventorsTsuyoshi Nagatake, Jugo Mitomo
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Abstract
A semiconductor light emitting device with which a driving voltage is able to be kept low is provided. The semiconductor light emitting device includes: an n-type cladding layer; an active layer; a p-type cladding layer containing AlGaInP; an intermediate layer; and a contact layer containing GaP in this order, wherein the intermediate layer contains Ga1-aInaP (0.357≦a≦0.408), and has a thickness of from 10 nm to 20 nm both inclusive.
Claims4
A semiconductor light emitting device comprising:
- an n-type cladding layer;
- an active layer;
- a p-type cladding layer containing AlGaInP;
- an intermediate layer;
- and
- a contact layer containing GaP in this order, wherein the intermediate layer contains Ga1-aInaP (0.357≦a≦0.408), and has a thickness of from 10 nm to 20 nm both inclusive.
3 more elements
A semiconductor light emitting device comprising:
- an n-type cladding layer;
- an active layer;
- a p-type cladding layer containing AlGaInP;
- an intermediate layer;
- and
- a contact layer containing GaP in this order, wherein the intermediate layer has a superlattice structure including a first semiconductor layer containing Ga1-bInbP (0.357≦b≦0.408) and a second semiconductor layer containing (AlcGa1-c)1-dIndP (0.4≦c≦1, 0<d<1), and
- a total thickness of the first semiconductor layer in the superlattice structure is from 10 nm to 20 nm both inclusive.
4 more elements
Dependencies are inferred from the claim text.