Nitride-based semiconductor device and method for fabricating the same
AssigneePanasonic Corporation
InventorsMitsuaki Oya, Toshiya Yokogawa, Atsushi Yamada, Ryou Kato
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Abstract
A nitride-based semiconductor light-emitting device 100 includes a GaN substrate 10, of which the principal surface is an m-plane 12, a semiconductor multilayer structure 20 that has been formed on the m-plane 12 of the GaN-based substrate 10, and an electrode 30 arranged on the semiconductor multilayer structure 20. The electrode 30 includes an Mg alloy layer 32 which is formed of Mg and a metal selected from a group consisting of Pt, Mo, and Pd. The Mg alloy layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.
Claims19
A nitride-based semiconductor device, comprising:
- a nitride-based semiconductor multilayer structure including a p-type semiconductor region, a surface of the p-type semiconductor region being an m-plane;
- and
- an electrode that is arranged on the p-type semiconductor region,
- wherein the p-type semiconductor region is made of an AlxInyGazN semiconductor (where x+y+z=1, x≧0, y≧0, and z≧0), and
- the electrode includes an Mg alloy layer which is in contact with the surface of the p-type semiconductor region and which is made of Mg and a metal selected from a group consisting of Pt, Mo, and Pd.
A light source, comprising:
- a nitride-based semiconductor light-emitting device;
- and
- a wavelength converter including a phosphor that converts a wavelength of light emitted from the nitride-based semiconductor light-emitting device,
- wherein the nitride-based semiconductor light-emitting device includes
- a nitride-based semiconductor multilayer structure including a p-type semiconductor region, a surface of the p-type semiconductor region being an m-plane, and
- an electrode that is arranged on the p-type semiconductor region,
- the p-type semiconductor region is made of an AlxInyGazN semiconductor (where x+y+z=1, x≧0, y≧0, and z≧0), and
- the electrode includes an Mg alloy layer which is in contact with the surface of the p-type semiconductor region and which is made of Mg and a metal selected from a group consisting of Pt, Mo, and Pd.
A method for fabricating a nitride-based semiconductor device, comprising the steps of:
- (a) providing a substrate;
- (b) forming on the substrate a nitride-based semiconductor multilayer structure including a p-type semiconductor region, a surface of the p-type semiconductor region being an m-plane;
- and
- (c) forming an electrode on the surface of the p-type semiconductor region of the semiconductor multilayer structure,
- wherein step (c) includes forming an Mg alloy layer on the surface of the p-type semiconductor region, the Mg alloy layer being made of Mg and a metal selected from a group consisting of Pt, Mo, and Pd.
A nitride-based semiconductor device, comprising:
- a nitride-based semiconductor multilayer structure including a p-type semiconductor region, a surface of the p-type semiconductor region being an m-plane;
- and
- an electrode that is arranged on the p-type semiconductor region,
- wherein the p-type semiconductor region is made of an AlxInyGazN semiconductor (where x+y+z=1, x≧0, y≧0, and z≧0), and
- the electrode includes an Mg alloy island provided on the surface of the p-type semiconductor region, the Mg alloy island being made of Mg and a metal selected from a group consisting of Pt, Mo, and Pd.
Dependencies are inferred from the claim text.