Semiconductor device and method of manufacturing the same
AssigneeSumitomo Electric Industries, Ltd.
InventorHideto Tamaso
Life of this patent
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Abstract
A MOSFET representing a semiconductor device capable of achieving decrease in the number of steps in a manufacturing process and improvement in integration by including an electrode that can be in contact with any of a p-type SiC region and an n-type SiC region with contact resistance being sufficiently suppressed includes an n+ SiC substrate, an n− SiC layer formed on the n+ SiC substrate, and a source electrode arranged in contact with the n− SiC layer. The n− SiC layer includes an n+ source region having an n conductivity type. The source electrode includes a source contact electrode arranged in contact with the n+ source region and containing Ti, Al and Si.
Claims16
A semiconductor device, comprising:
- a substrate;
- an SiC layer formed on said substrate and composed of silicon carbide;
- and
- an electrode arranged in contact with said SiC layer,
- said SiC layer including an n-type region having an n conductivity type, and
- said electrode including an ohmic contact electrode arranged in contact with said n-type region and containing titanium, aluminum and silicon.
A method of manufacturing a semiconductor device, comprising the steps of:
- preparing a substrate;
- forming on said substrate, an SiC layer composed of silicon carbide and including an n-type region having an n conductivity type;
- and
- forming an electrode to be in contact with said SiC layer, and
- said step of forming an electrode including the step of forming an ohmic contact electrode arranged in contact with said n-type region and containing titanium, aluminum and silicon.
Dependencies are inferred from the claim text.