Semiconductor device
AssigneeSumitomo Electric Industries, Ltd.
InventorHideto Tamaso
Life of this patent
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Abstract
A MOSFET capable of achieving decrease in the number of steps in a manufacturing process and improvement in integration includes an SiC wafer composed of silicon carbide and a source contact electrode arranged in contact with the SiC wafer and containing titanium, aluminum, silicon, and carbon as well as a remaining inevitable impurity. The SiC wafer includes an n+ source region having an n conductivity type and a p+ region having a p conductivity type. Both of the n+ source region and the p+ region are in contact with the source contact electrode. The source contact electrode contains aluminum and titanium in a region including an interface with the SiC wafer.
Claims13
A semiconductor device, comprising:
- an SiC wafer composed of silicon carbide;
- and
- an ohmic contact electrode arranged in contact with said SiC wafer and containing titanium, aluminum, silicon, and carbon as well as a remaining inevitable impurity,
- said SiC wafer including
- an n-type region having an n conductivity type, and
- a p-type region having a p conductivity type,
- each of said n-type region and said p-type region being in contact with said ohmic contact electrode, and
- said ohmic contact electrode containing aluminum and titanium in a region including an interface with said SiC wafer.
A semiconductor device, comprising:
- an SiC wafer composed of silicon carbide;
- and
- an ohmic contact electrode arranged in contact with said SiC wafer and containing titanium, aluminum, silicon, and carbon as well as a remaining inevitable impurity,
- said SiC wafer including
- an n-type region having an n conductivity type, and
- a p-type region having a p conductivity type,
- each of said n-type region and said p-type region being in contact with said ohmic contact electrode, and
- a region of said ohmic contact electrode including a surface opposite to said SiC wafer containing silicon.
A semiconductor device, comprising:
- an SiC wafer composed of silicon carbide;
- and
- an ohmic contact electrode arranged in contact with said SiC wafer and containing titanium, aluminum, silicon, and carbon as well as a remaining inevitable impurity,
- said SiC wafer including
- an n-type region having an n conductivity type, and
- a p-type region having a p conductivity type,
- each of said n-type region and said p-type region being in contact with said ohmic contact electrode, and
- in said ohmic contact electrode, a content of aluminum monotonously decreasing toward said SiC wafer and a content of silicon monotonously increasing toward said SiC wafer.
Dependencies are inferred from the claim text.