Light emitting diodes including integrated backside reflector and die attach

A light emitting diode comprising:

• a silicon carbide substrate having first and second opposing faces;
• a diode region on the first face;
• anode and cathode contacts on the diode region opposite the silicon carbide substrate;
• and
• a hybrid reflector on the silicon carbide substrate opposite the diode region, the hybrid reflector comprising a transparent layer having an index of refraction that is lower than the silicon carbide substrate and a reflective layer on the transparent layer, opposite the substrate.

A light emitting diode comprising:

• a silicon carbide substrate having first and second opposing faces;
• a diode region on the first face;
• anode and cathode contacts on the diode region opposite the silicon carbide substrate;
• and
• a transparent layer having an index of refraction that is lower than the silicon carbide substrate, on the silicon carbide substrate opposite the diode region.

An integrated backside reflector and die attach for a light emitting diode that includes a silicon carbide substrate having first and second opposing faces, a diode region on the first face and anode and cathode contacts on the diode region opposite the silicon carbide substrate;

• the integrated backside reflector and die attach comprising:
• a hybrid reflector on the silicon carbide substrate opposite the diode region, the hybrid reflector comprising a transparent layer having an index of refraction that is lower than the silicon carbide substrate and a reflective layer comprising metal on the transparent layer, opposite the substrate;
• and
• a die attach layer comprising metal on the reflective layer, opposite the transparent layer.

A light emitting diode comprising:

• a substrate having first and second opposing faces;
• a diode region on the first face, the diode region having an index of refraction that is not higher than the substrate;
• anode and cathode contacts on the diode region opposite the substrate;
• and
• a transparent layer having an index of refraction that is lower than the substrate, on the substrate opposite the diode region.