Manufacturing method of semiconductor device and semiconductor device

A semiconductor device comprising:

• a gate electrode layer over a light-transmitting substrate;
• a gate insulating layer containing an inorganic material over the gate electrode layer;
• an organic polymer layer in a region which is over the gate insulating layer and which does not overlap with the gate electrode layer;
• a source electrode layer and a drain electrode layer over the organic polymer layer;
• and
• a semiconductor layer over the gate insulating layer with an organosilane film having a hydrolytic group therebetween,
• wherein the semiconductor layer includes an oxide semiconductor layer.

A semiconductor device comprising:

• a gate electrode layer over a light-transmitting substrate;
• a gate insulating layer containing an inorganic material over the gate electrode layer;
• an organic polymer layer in two first regions on the gate insulating layer and outside position of the gate electrode layer;
• a source electrode layer and a drain electrode layer over the organic polymer layer;
• and
• a semiconductor layer in a second region on the gate insulating layer and between the two first regions,
• wherein a surface energy in the second region is lower than a surface energy in the two first regions,
• wherein the semiconductor layer includes an oxide semiconductor layer.

A semiconductor device comprising:

• a gate electrode layer over a light-transmitting substrate;
• a gate insulating layer containing an inorganic material over the gate electrode layer;
• an organic polymer layer in two first regions on the gate insulating layer and outside position of the gate electrode layer;
• a source electrode layer and a drain electrode layer over the organic polymer layer;
• and
• a semiconductor layer in a second region on the gate insulating layer and between the two first regions, with an organosilane film having a hydrolytic group therebetween,
• wherein a surface energy in the second region is lower than a surface energy in the two first regions, and
• wherein the semiconductor layer includes an oxide semiconductor layer.

An electronic paper comprising:

• a gate electrode layer over a light-transmitting substrate;
• a gate insulating layer containing an inorganic material over the gate electrode layer;
• an organic polymer layer in a region which is over the gate insulating layer and which does not overlap of the gate electrode layer;
• a source electrode layer and a drain electrode layer over the organic polymer layer;
• a semiconductor layer over the gate insulating layer and the source electrode layer and the drain electrode layer:
• a first electrode over the semiconductor layer, the first electrode being electrically connected to the source electrode layer or the drain electrode layer;
• a second electrode over the first electrode;
• and
• a twist ball between the first electrode and the second electrode,
• wherein the semiconductor layer includes an oxide semiconductor layer.

An electronic paper comprising:

• a gate electrode layer over a light-transmitting substrate;
• a gate insulating layer containing an inorganic material over the gate electrode layer;
• an organic polymer layer in a region which is over the gate insulating layer and which does not overlap of the gate electrode layer;
• a pair of a source electrode layer and a drain electrode layer over the organic polymer layer;
• a semiconductor layer over the gate insulating layer with an organosilane film having a hydrolytic group therebetween;
• a first electrode over the semiconductor layer, the first electrode being electrically connected to the source electrode layer or the drain electrode layer;
• a second electrode over the first electrode;
• and
• a twist ball between the first electrode and the second electrode,
• wherein the semiconductor layer includes an oxide semiconductor layer.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a gate electrode layer over a light-transmitting substrate;
• forming a gate insulating layer containing an inorganic material over the gate electrode layer and the substrate;
• forming an organic layer containing a photopolymerizable reactive group over the gate insulating layer;
• polymerizing selectively the organic layer by irradiating the organic layer with light from back side of the substrate, using the gate electrode layer as a mask;
• foaming an organic polymer layer by removing a residue of the organic layer, which is other than polymerized;
• forming an organosilane film including a hydrolytic group over the gate insulating layer in a region other than a region in which the organic polymer layer is formed;
• fowling a source electrode layer and a drain electrode layer by applying a composition containing a conductive material over the organic polymer layer;
• and
• forming a semiconductor layer over the gate electrode layer, the source electrode layer, and the drain electrode layer,
• wherein the semiconductor layer includes an oxide semiconductor layer.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a gate electrode layer over a light-transmitting substrate;
• forming a gate insulating layer containing an inorganic material over the gate electrode layer and the substrate;
• forming an organic layer containing a photopolymerizable reactive group over the gate insulating layer ;
• polymerizing selectively the organic layer by irradiating the organic layer with light from back side of the substrate, using the gate electrode layer as a mask;
• forming an organic polymer layer by removing a residue of the organic layer, which is other than polymerized;
• forming a first organosilane film including a first hydrolytic group over the gate insulating layer in a region other than a region in which the organic polymer layer is formed;
• forming a source electrode layer and a drain electrode layer by applying a composition containing a conductive material over the organic polymer layer;
• removing the first organosilane film;
• forming a second organosilane film having a second hydrolytic group over the gate electrode layer, the source electrode layer, and the drain electrode layer;
• and
• forming a semiconductor layer over the second organosilane film,
• wherein the semiconductor layer includes an oxide semiconductor layer.