Thin film transistor
AssigneeSony Corporation
InventorsCHUNMEI WANG, WEI BENG NG, TAKEHISA ISHIDA
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Abstract
A method is proposed for producing a thin-film transistor (TFT), the method comprising forming a substrate, applying a ZnO-based precursor solution onto the substrate to form a ZnO-based channel layer, annealing the channel layer, forming a source electrode and a drain electrode on the channel layer, forming a dielectric layer on the channel layer and forming a gate electrode on the dielectric layer.
Claims20
A method for producing a thin-film transistor (TFT) comprising:
- forming a substrate;
- applying a metal oxide-based precursor solution onto the substrate to form a metal oxide-based channel layer;
- annealing the channel layer;
- forming a source electrode and a drain electrode on the channel layer;
- forming a dielectric layer on the channel layer;
- and
- forming a gate electrode on the dielectric layer.
The method according to claim 14 wherein the heat curing the dielectric layer is done at a temperature greater than or equal to 175° C.
A thin-film transistor (TFT) comprising:
- a solution processed metal oxide-based channel layer;
- a source electrode and a drain electrode on the channel layer;
- an organic dielectric layer on the channel layer;
- and
- a gate electrode on the organic dielectric layer.
Dependencies are inferred from the claim text.