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US 2011/0031489 A1Published application
COMPLEMENTARY THIN FILM ELECTRONICS BASED ON ZnO/ZnTe
AssigneeThe Regents of the University of Michigan
InventorsJamie Phillips, Willie Bowen, Weiming Wang
Life of this patent
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Abstract
A complementary thin-film electronic device structure is provided where one of the transistors has a p-type channel region fabricated from zinc telluride material. The device structure further includes another field effect transistor having an n-type channel region disposed adjacent to and operably coupled to the p-type transistor.
Claims18
A complementary semiconductor device, comprising:
- a first field effect transistor residing on a substrate and having an n-type channel region fabricated from a II-VI compound semiconductor material;
- and
- a second field effect transistor residing on the substrate and having a p-type channel region fabricated from zinc telluride material, wherein a drain electrode of the second field effect transistor is electrically coupled to a drain electrode of the first field effect transistor.
A complementary semiconductor device, comprising:
- a substrate
- a n-type field effect transistor having a n-type channel region and disposed on the substrate;
- and
- a p-type field effect transistor disposed on the substrate adjacent to the n-type field effect transistor and operably coupled thereto, the p-type field effect transistor having a p-type channel region fabricated from zinc telluride material.
1 more element
A complementary inverter circuit, comprising:
- a p-type field effect transistor having a source electrode, a drain electrode, a gate electrode and a channel region, where the channel region is fabricated from zinc telluride material
- a n-type field effect transistor having a source electrode, a drain electrode, a gate electrode and a channel region, where the gate electrodes for the n-type and p-type field effect transistors are electrically coupled to an input voltage and to each other, and the drain electrodes for the n-type and p-type field effect transistor are electrically coupled together to form an output terminal.
Dependencies are inferred from the claim text.