Organic light emitting diode display device and method of fabricating the same

An OLED display device, comprising:

• a substrate having a pixel region and a non-pixel region;
• a buffer layer arranged on the substrate;
• a semiconductor layer arranged in the non-pixel region of the substrate;
• a first electrode arranged in the pixel region and electrically connected to the semiconductor layer;
• source and drain electrodes arranged on the semiconductor layer in the non-pixel region;
• a gate insulating layer partially exposing the first electrode in the pixel region and arranged on an entire surface of the substrate;
• a gate electrode arranged on the gate insulating layer to correspond to the semiconductor layer;
• a pixel defining layer partially exposing the first electrode;
• an organic layer arranged on the first electrode;
• and
• a second electrode arranged on the entire surface of the substrate, wherein the source and drain electrodes are comprised of a substantially same material as the first electrode.

A method of fabricating an OLED display device, comprising:

• providing a substrate having a pixel region and a non-pixel region;
• forming a buffer layer on an entire surface of the substrate;
• forming a semiconductor layer on the buffer layer in the non-pixel region;
• forming a first electrode in the pixel region and in the non-pixel region, the first electrode being connected to the semiconductor layer;
• forming a gate insulating layer partially exposing the first electrode;
• forming a gate electrode on the gate insulating layer to correspond to the semiconductor layer;
• forming a pixel defining layer partially exposing the first electrode;
• forming an organic layer on the exposed first electrode;
• and
• forming a second electrode on the entire surface of the substrate.

A method of fabricating an OLED display device, comprising:

• providing a substrate having a pixel region and a non-pixel region;
• forming a buffer layer on an entire surface of the substrate;
• forming a semiconductor layer on the buffer layer in the non-pixel region;
• forming first and second conductive layers connected to the semiconductor layer in the pixel region and in the non-pixel region;
• forming a gate insulating layer partially exposing the second conductive layer;
• forming a gate electrode on the gate insulating layer to correspond to the semiconductor layer;
• forming a pixel defining layer partially a portion of the second conductive layer;
• forming a first electrode by removing the exposed portion of the second conductive layer;
• forming an organic layer on the first electrode;
• and
• forming a second electrode on the entire surface of the substrate.