Back to results
US 2011/0031475 A1Published application
Semiconductor Composition
AssigneeXerox Corporation
InventorsYiliang Wu, Ping Liu, Nan-Xing Hu
Life of this patent
Estimating the term…
Abstract
A semiconducting liquid composition including a semiconducting material comprising a compound of the formula disclosed herein, a liquid vehicle, a solubility promoter that enhances solubility of the semiconducting polymer; and an optional crystallization inhibitor.
Claims20
A liquid composition comprising:
- a semiconducting material comprising a compound of the formula
- wherein A is a divalent linkage;
- R1 and R2 are each independently selected from hydrogen, alkyl, substituted alkyl, alkoxy, substituted alkoxy, a suitable hetero-containing group, a halogen, perhaloalkyl, alkoxyalkyl, siloxyl-substituted alkyl, polyether;
- and n is an integer from about 2 to about 5,000;
- a liquid vehicle;
- a solubility promoter that enhances solubility of the semiconducting material;
- and
- an optional crystallization inhibitor.
5 more elements
A method of forming a semiconducting layer of a thin film transistor comprising:
- a) providing an liquid composition comprising:
- a semiconducting material comprising a compound of the formula
- wherein A is a divalent linkage;
- R1 and R2 are each independently selected from hydrogen, alkyl, substituted alkyl, alkoxy, substituted alkoxy, a suitable hetero-containing group, a halogen, perhaloalkyl, alkoxyalkyl, siloxyl-substituted alkyl, polyether;
- and n is an integer from about 2 to about 5,000;
- a liquid vehicle;
- a solubility promoter that enhances solubility of the semiconducting material;
- and
- an optional crystallization inhibitor;
- b) applying the liquid composition over a substrate of the transistor;
- and
- c) drying the liquid composition to form a semiconducting layer.
9 more elements
A semiconducting device comprising:
- a substrate;
- a gate electrode;
- a gate dielectric layer;
- a source electrode;
- a drain electrode;
- and
- in contact with the source and drain electrodes and the gate dielectric layer, a semiconductor layer comprising a compound of the formula
- wherein A is a divalent linkage;
- R1 and R2 are each independently selected from hydrogen, alkyl, substituted alkyl, alkoxy, substituted alkoxy, a suitable hetero-containing group, a halogen, perhaloalkyl, alkoxyalkyl, siloxyl-substituted alkyl, polyether;
- and n is an integer from about 2 to about 5,000;
- a liquid vehicle;
- a solubility promoter that enhances solubility of the semiconducting material;
- and
- an optional crystallization inhibitor.
11 more elements
Dependencies are inferred from the claim text.