Semiconductor light-emitting device with a highly reflective ohmic-electrode

A semiconductor light-emitting device, comprising:

• a multilayer semiconductor structure on a conductive substrate, the multilayer semiconductor structure comprising a first doped semiconductor layer situated above the conductive substrate, a second doped semiconductor layer situated above the first doped semiconductor layer, and/or a multi-quantum-wells (MQW) active layer situated between the first and second doped semiconductor layers;
• a reflective ohmic-contact metal layer situated between the first doped semiconductor layer and the conductive substrate, wherein the reflective ohmic-contact metal layer comprises:
• Ag, and at least one of the following materials:
• Pt, Ni, Ru, Rh, Pd, Au, Os, and Ir;
• at least one of the following materials:
• Zn, Mg, Be, and Cd;
• and
• a number of the following materials:
• W, Cu, Fe, Ti, Ta, and Cr;
• a bonding layer situated between the reflective ohmic-contact metal layer and the conductive substrate;
• a first electrode coupled to the conductive substrate;
• and
• a second electrode on the second doped semiconductor layer.