Semiconductor device

A semiconductor device comprising:

• an element forming layer;
• a substrate provided with a first conductive layer;
• and
• an adhesive layer which adheres the element forming layer and the substrate, the adhesive layer containing a conductive particle,
• wherein the element forming layer includes:
• a first transistor and a second transistor;
• an interlayer insulating layer which covers the first transistor and the second transistor;
• a second conductive layer electrically connected to a source region or a drain region of the first transistor through a first opening portion provided in the interlayer insulating layer, wherein a portion of the second conductive layer is exposed on a back surface of the element forming layer through a second opening portion provided in the interlayer insulating layer;
• and
• a third conductive layer, an organic compound layer or a phase change layer, and a fourth conductive layer laminated in this order, wherein the third conductive layer overlaps the second transistor,
• wherein the third conductive layer is electrically connected to a source region or a drain region of the second transistor through a third opening, and
• wherein the first conductive layer and the exposed portion of the second conductive layer are electrically connected through the conductive particle of the adhesive layer.

A semiconductor device comprising:

• a first element forming layer;
• a second element forming layer adhered to the first element forming layer through an adhesive layer, the adhesive layer containing a conductive particle,
• wherein the first element forming layer includes:
• a first transistor and a second transistor;
• an interlayer insulating layer which covers the first transistor and the second transistor;
• a first conductive layer over the interlayer insulating layer;
• a second conductive layer electrically connected to a source region and a drain region of the first transistor through a first opening portion provided in the interlayer insulating layer, wherein a portion of the second conductive layer is exposed on a back surface of the first element forming layer through a second opening portion provided in the interlayer insulating layer,
• wherein the second element forming layer comprises a third conductive layer, an organic compound layer or a phase change layer, and a fourth conductive layer laminated in this order, and
• wherein the third conductive layer and the exposed portion of the second conductive layer are electrically connected through the conductive particle of the adhesive layer.