Nonvolatile memory device and method for manufacturing the same

A nonvolatile memory device comprising:

• a substrate;
• a first electrode extending in a first direction and provided on the substrate;
• a second electrode extending in a second direction crossing the first direction and provided on the first electrode;
• a third electrode extending in a third direction and provided on the second electrode;
• a fourth electrode extending in a fourth direction crossing the third direction and provided on the third electrode;
• a first memory portion provided between the first electrode and the second electrode and having a first oxygen composition ratio and a first layer thickness;
• and
• a second memory portion provided between the third electrode and the fourth electrode and having at least one of a second oxygen composition ratio different from the first oxygen composition ratio and a second layer thickness different from the first layer thickness.

A method for manufacturing a nonvolatile memory device, comprising:

• forming a first electrode extending in a first direction on a substrate;
• forming a first memory portion having a first oxygen composition ratio and a first layer thickness on the first electrode;
• forming a second electrode provided on the first memory portion and extending in a second direction crossing the first direction;
• forming a second memory portion having at least one of a second oxygen composition ratio different from the first oxygen composition ratio and a second layer thickness different from the first layer thickness on the second electrode;
• and
• forming a third electrode provided on the second memory portion and extending in a direction crossing the second direction.

A method for manufacturing a nonvolatile memory device, comprising:

• forming a first electrode extending in a first direction on a substrate;
• forming a first memory portion having a first oxygen composition ratio and a first layer thickness on the first electrode;
• forming a second electrode provided on the first memory portion and extending in a second direction crossing the first direction;
• forming a third electrode provided on the second electrode and extending in a direction crossing the second electrode;
• forming a second memory portion having at least one of a second oxygen composition ratio different from the first oxygen composition ratio and a second layer thickness different from the first layer thickness on the third electrode;
• and
• forming a fourth electrode provided on the second memory portion and extending in a direction crossing the third electrode.