Semiconductor memory device and a method of manufacturing the same
AssigneeSony Corporation
InventorsYoshihisa KAGAWA, Tetsuya MIZUGUCHI, Ichiro FUJIWARA, Akira KOUCHIYAMA, Satoshi SASAKI, Naomi YAMADA
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Abstract
Disclosed herein is a semiconductor memory device, including: a first electrode formed on a substrate; an ion source layer formed on an upper layer of the first electrode; and a second electrode formed on an upper layer of the ion source layer. Resistance change type memory cells in each of which either a surface of the first electrode or a surface of the ion source layer is oxidized to form a resistance change type memory layer in an interface between the first electrode and the ion source interface are arranged in a array.
Claims14
A semiconductor memory device, comprising:
- a first electrode formed on a substrate;
- an ion source layer formed on an upper layer of said first electrode;
- and
- a second electrode formed on an upper layer of said ion source layer;
- wherein resistance change type memory cells in each of which either a surface of said first electrode or a surface of said ion source layer is oxidized to form a resistance change type memory layer in an interface between said first electrode and said ion source interface are arranged in a array.
A method of manufacturing a semiconductor memory device, comprising the steps of:
- forming a first electrode on a substrate;
- forming an ion source layer on an upper layer of said first electrode;
- and
- forming a second electrode on an upper layer of said ion source layer;
- and
- further including the step of oxidizing either a surface of said first electrode or a surface of said ion source layer to form a resistance change type memory layer in an interface between said first electrode and said ion source layer between the step of forming said first electrode on said substrate and the step of forming said second electrode on the upper layer of said ion source layer;
- wherein said resistance change type memory cells are arranged in an array, thereby structuring said semiconductor memory device.
Dependencies are inferred from the claim text.