Phase change memory devices and methods of forming a phase change material
AssigneeMicron Technology, Inc.
InventorKeith R. Hampton
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Abstract
A phase change material including a high adhesion phase change material formed on a dielectric material and a low adhesion phase change material formed on the high adhesion phase change material. The high adhesion phase change material includes a greater amount of at least one of nitrogen and oxygen than the low adhesion phase change material. The phase change material is produced by forming a first chalcogenide compound material including an amount of at least one of nitrogen and oxygen on the dielectric material and forming a second chalcogenide compound including a lower percentage of at least one of nitrogen and oxygen on the first chalcogenide compound material. A phase change random access memory device, and a semiconductor structure are also disclosed.
Claims20
A phase change memory device, comprising
- a first electrode and a second electrode;
- a dielectric material in contact with the first electrode;
- and
- a phase change material in contact with the dielectric material and the second electrode, the phase change material comprising a greater concentration of at least one of nitrogen and oxygen towards the dielectric material than towards the second electrode.
A phase change memory device, comprising
- a dielectric material in contact with a first electrode;
- and
- a phase change material in contact with the dielectric material, the first electrode and a second electrode, the phase change material having a greater concentration of at least one of nitrogen and oxygen adjacent to the dielectric material than adjacent to the second electrode.
A method of forming a phase change material, comprising:
- introducing at least one of nitrogen gas and oxygen gas to a plasma;
- contacting a substrate comprising a dielectric material with the plasma;
- and
- forming a first phase change material on the dielectric material and a second phase change material on the first phase change material, the first phase change material comprising a greater amount of at least one of nitrogen and oxygen than the second phase change material.
A method of forming a phase change material, comprising:
- introducing at least one of nitrogen gas and oxygen gas to a plasma;
- contacting a substrate comprising a dielectric material with the plasma;
- and
- forming a first phase change material on the substrate comprising a dielectric material;
- implanting at least one of nitrogen and oxygen into the first phase change material;
- and
- forming a second phase change material on the first phase change material.
Dependencies are inferred from the claim text.