Electronic Component, And A Method of Manufacturing An Electronic Component
AssigneeTaiwan Seminconductor Manufacturing Co., Ltd.
InventorsFriso Jacobus Jedema, Michael Antoine Armand in't Zandt
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Abstract
Provided is an electronic component that includes a first bi-layer stack including a first silicon oxide layer and a first silicon nitride layer, a second bi-layer stack including a second silicon oxide layer and a second silicon nitride layer, and a convertible structure which is convertible between at least two states having different electrical properties, where the convertible structure is arranged between the first bi-layer stack and the second bi-layer stack.
Claims18
An electronic component, the electronic component comprising
- a first bi-layer stack comprising a first silicon oxide layer and a first silicon nitride layer;
- a second bi-layer stack comprising a second silicon oxide layer and a second silicon nitride layer;
- a convertible structure which is convertible between at least two states having different electrical properties;
- wherein the convertible structure is arranged at least partially between the first bi-layer stack and the second bi-layer stack.
A method of forming an electronic component, the method comprising forming a first bi-layer stack comprising a first silicon oxide layer and a first silicon nitride layer;
- forming a second bi-layer stack comprising a second silicon oxide layer and a second silicon nitride layer;
- arranging a convertible structure, which is convertible between at least two states having different electrical properties, at least partially between the first bi-layer stack and the second bi-layer stack.
Dependencies are inferred from the claim text.