Phase change memory device
AssigneeSamsung Electronics Co., Ltd.
InventorsMyung-Jin KANG, Yong-Ho HA, Doo-Hwan PARK, Jeong-Hee PARK, Hee-Ju SHIN
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Abstract
A method of fabricating a phase change memory device includes forming an opening in a first layer, forming a phase change material in the opening and on the first layer, heating the phase change material to a first temperature that is sufficient to reflow the phase change material in the opening, wherein the first temperature is less than a melting point of the phase change material, and, after heating the phase change material to the first temperature, patterning the phase change material to define a phase change element in the opening.
Claims7
-14. (canceled)
A phase change memory device, comprising:
- a first insulating layer having an opening therein;
- a phase change element in the opening, the phase change element being changed between amorphous and crystalline states through self-heating;
- and
- first and second electrodes contacting bottom and top surfaces, respectively, of the phase change element, wherein a wetting material for a phase change material of the phase change element is in contact with the phase change element.
Dependencies are inferred from the claim text.