Method of manufacturing an analytical sample and method of analyzing an analytical sample
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorSatoshi TORIUMI
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Abstract
A method of manufacturing an analytical sample by a secondary ion mass spectrometry method is provided, which comprises a step of forming a separation layer over a substrate, a step of forming one of a thin film and a thin-film stack body to be analyzed over the separation layer, a step of forming an opening portion in one of the thin film and the thin-film stack body, a step of attaching a supporting body to one of a surface of the thin film and a surface of a top layer of the thin-film stack body, and a step of separating one of the thin film and the thin-film stack body from the substrate.
Claims10
A method of manufacturing an analytical sample by a secondary ion mass spectrometry method, comprising:
- forming a separation layer comprising an amorphous silicon film containing fluorine over a glass substrate;
- forming a relief layer comprising an amorphous silicon film containing fluorine over a separation layer;
- forming one of a thin film and a thin-film stack body to be analyzed over the relief layer;
- forming an opening portion in one of the thin film and the thin-film stack body;
- attaching a supporting body to one of a surface of the thin film and a surface of a top layer of the thin-film stack body;
- separating one of the thin film and the thin-film stack body from the glass substrate;
- and
- wherein the separation layer is a film with a higher fluorine concentration than the relief layer.
A method of analyzing an analytical sample by a secondary ion mass spectrometry method, comprising:
- forming a separation layer comprising an amorphous silicon film containing fluorine over a glass substrate;
- forming a relief layer comprising an amorphous silicon film containing fluorine over a separation layer;
- forming one of a thin film and a thin-film stack body to be analyzed over the relief layer;
- forming an opening portion in one of the thin film and the thin-film stack body to be analyzed;
- attaching a supporting body to one of a surface of the thin film and a surface of a top layer of the thin-film stack body;
- separating one of the thin film and the thin-film stack body from the glass substrate;
- irradiating a surface of the separation layer with primary ions to analyze one of the thin film and the thin-film stack body;
- and
- wherein the separation layer is a film with a higher fluorine concentration than the relief layer.
Dependencies are inferred from the claim text.