Solid-state image pickup element, method of manufacturing the same, and image pickup apparatus including the same
AssigneeSony Corporation
InventorsItaru Oshiyama, Susumu Hiyama
Life of this patent
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Abstract
A solid-state image pickup element 1 is structured so as to include: a semiconductor layer 2 having a photodiode formed therein, photoelectric conversion being carried out in the photodiode; a first film 21 having negative fixed charges and formed on the semiconductor layer 2 in a region in which at least the photodiode is formed; and a second film 22 having the negative fixed charges, made of a material different from that of the first film 21 having the negative fixed charges, and formed on the first film 21 having the negative fixed charges.
Claims9
A solid-state image pickup element, comprising:
- a semiconductor layer having a photodiode formed therein, photoelectric conversion being carried out in said photodiode;
- a first film having negative fixed charges and formed on said semiconductor layer in a region in which at least said photodiode is formed;
- and
- a second film having the negative fixed charges, made of a material different from that of said first film having the negative fixed charges, and formed on said first film having the negative fixed charges.
A method of manufacturing a solid-state image pickup element, comprising:
- a process for forming a photodiode in a semiconductor layer;
- a process for forming a first film having negative fixed charges on said semiconductor layer in a region in which at least said photodiode is formed;
- and
- a process for forming a second film having the negative fixed charges and made of a material different from that of said first film having the negative fixed charges on said first film having the negative fixed charges.
An image pickup apparatus, comprising:
- a condensing optical portion configured to condense an incident light;
- a solid-state image pickup element including a semiconductor layer having a photodiode formed therein, photoelectric conversion being carried out in said photodiode, a first film having negative fixed charges and formed on said semiconductor layer in a region in which at least said photodiode is formed, and a second film having the negative fixed charges, made of a material different from that of said first film having the negative fixed charges, and formed on said first film having the negative fixed charges, the solid-state image pickup element serving to receive the incident light condensed by the condensing optical portion, thereby carrying out photoelectric conversion for the incident light;
- and
- a signal processing portion configured to process a signal obtained through the photoelectric conversion in said solid-state image pickup element.
Dependencies are inferred from the claim text.