Plasma processing apparatus using transmission electrode
OwnerKeizo SUZUKI, Masaru Izawa +3inventors
InventorsKeizo SUZUKI, Masaru Izawa, Nobuyuki Negishi, Kenetsu Yokogawa, Kenji Maeda
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Abstract
At least a part of a discharging electromagnetic wave is introduced into a processing chamber via a transmission electrode which has characteristics to behave as a dielectric (electric insulator) for the discharging electromagnetic wave, and to behave as a material with electric conductivity for RF bias electromagnetic wave of electromagnetic wave of ion plasma oscillation.
Claims10
A plasma processing apparatus including a processing chamber, a unit for introducing processing gas into the processing chamber, a unit for partially generating a discharge in at least a part of a region in the processing chamber, and a sample holding unit for holding a sample, all of which form at least a part of a component for performing a plasma processing by introducing the sample into the processing chamber, the apparatus further comprising a unit for introducing a discharging electromagnetic wave into the processing chamber as at least a part of the unit for generating the discharge,
- wherein:
- at least a part of the discharging electromagnetic wave is introduced into a discharging region where the discharge is generated via a transmission electrode;
- a transmission electrode layer is provided as at least a part of a component of the transmission electrode;
- the transmission electrode layer is formed of an electric semiconductor or an electric conductor as a material with electric conductivity;
- and
- the sample held by the sample holding unit and the transmission electrode or the transmission electrode layer are oppositely arranged.
A plasma processing apparatus including a processing chamber, a unit for introducing processing gas into the processing chamber, a unit for partially generating a discharge in at least a part of a region in the processing chamber, and a sample holding unit for holding a sample, all of which form at least a part of a component for performing a plasma processing by introducing the sample into the processing chamber, the apparatus further comprising a unit for introducing a discharging electromagnetic wave into the processing chamber as at least a part of the unit for generating the discharge,
- wherein:
- at least a part of the discharging electromagnetic wave is introduced into a discharging region where the discharge is generated via a transmission electrode;
- a transmission electrode layer is provided as at least a part of a component of the transmission electrode;
- the transmission electrode layer is formed of an electric semiconductor or an electric conductor as a material with electric conductivity;
- and
- a unit for forming a magnetic field is provided in at least a part of the discharging region.
A plasma processing apparatus including a processing chamber, a unit for introducing processing gas into the processing chamber, a unit for partially generating a discharge in at least a part of a region in the processing chamber, and a sample holding unit for holding a sample, all of which form at least a part of a component for performing a plasma processing by introducing the sample into the processing chamber, the apparatus further comprising a unit for introducing a discharging electromagnetic wave into the processing chamber as at least a part of the unit for generating the discharge,
- wherein:
- at least a part of the discharging electromagnetic wave is introduced into a discharging region where the discharge is generated via a transmission electrode;
- a transmission electrode layer is provided as at least a part of a component of the transmission electrode;
- the transmission electrode layer is formed of an electric semiconductor or an electric conductor as a material with electric conductivity;
- and
- a frequency of the discharging electromagnetic wave is in a range from 0.1 GHz to 10 GHz.
A plasma processing apparatus including a processing chamber, a unit for introducing processing gas into the processing chamber, a unit for partially generating a discharge in at least a part of a region in the processing chamber, and a sample holding unit for holding a sample, all of which form at least a part of a component for performing a plasma processing by introducing the sample into the processing chamber, the apparatus further comprising a unit for introducing a discharging electromagnetic wave into the processing chamber as at least a part of the unit for generating the discharge,
- wherein:
- at least a part of the discharging electromagnetic wave is introduced into a discharging region where the discharge is generated via a transmission electrode;
- a transmission electrode layer is provided as at least a part of a component of the transmission electrode;
- the transmission electrode layer is formed of an electric semiconductor or an electric conductor as a material with electric conductivity;
- and
- a resistivity of a material for forming the transmission electrode layer is equal to or smaller than 3×10−7 Ωm.
A plasma processing apparatus including a processing chamber, a unit for introducing processing gas into the processing chamber, a unit for partially generating a discharge in at least a part of a region in the processing chamber, and a sample holding unit for holding a sample, all of which form at least a part of a component for performing a plasma processing by introducing the sample into the processing chamber, the apparatus further comprising a unit for introducing a discharging electromagnetic wave into the processing chamber as at least a part of the unit for generating the discharge,
- wherein:
- at least a part of the discharging electromagnetic wave is introduced into a discharging region where the discharge is generated via a transmission electrode;
- a transmission electrode layer is provided as at least a part of a component of the transmission electrode;
- the transmission electrode layer is formed of an electric semiconductor or an electric conductor as a material with electric conductivity;
- and
- when physical quantity is expressed in International System of Units (SI system of units), following formulae (A1) to (A3) are established,
- ρte—RW(RW—te=0.97)<ρte<ρte—Vrb(ΔVrb—te=3V) (A1)
- ρte—RW=((2dte/ln(RW—te))2μte ωpf)/2 (A2)
- ρte—Vrb=(4dteΔVrb—te)/(iisrte2) (A3)
- where:
- ρte:
- resistivity of transmission electrode layer,
- dte:
- thickness of transmission electrode layer,
- RW—te:
- power transmission factor of discharging electromagnetic wave in transmission electrode layer,
- μte:
- permeability of transmission electrode layer,
- ωpf:
- angular frequency of discharging electromagnetic wave,
- ΔVte—te:
- RF drop voltage in transmission electrode layer,
- iis:
- incident ion current density of transmission electrode to the surface at discharging region side, and
- rte:
- radius or equivalent radius of transmission electrode layer,
- wherein following formula (B1) provides the value of rte—RW by calculating the formula (A2) using RW—te=0.97, and following formula (B2) provides the value of rte—Vrb by calculating the formula (A3) using DVrb—te=3V.
- ρte—RW(RW—te=0.97) (B1)
- ρte—Vrb(ΔVrb—te=3V) (B2)
Dependencies are inferred from the claim text.