Plasma treating apparatus and plasma treating method
AssigneeTokyo Electron Limited
InventorYoshiyuki KOBAYASHI
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AssigneeTokyo Electron Limited
InventorYoshiyuki KOBAYASHI
Estimating the term…
There are proposed a plasma treating apparatus and a plasma treating method using the same capable of improving the durability of site, member and parts in a chamber used for plasma etching in a corrosive gas atmosphere, which are exposed to the plasma atmosphere, and improving the resistance to plasma erosion of a coating formed on the surface of the member or the like in the corrosive gas atmosphere and preventing the occurrence of particles of a corrosion product even under a high plasma power. As a means therefore, in a plasma treating apparatus wherein a surface of a body to be treated in a chamber is subjected to a plasma treatment with an etching gas, at least surfaces of sites of the chamber itself exposing to the plasma atmosphere, or surfaces of a member or parts accommodated in the chamber are covered with a composite layer including a porous layer made from a metal oxide and a secondary recrystallized layer of the metal oxide formed on the porous layer.
A plasma treating apparatus comprising a chamber for accommodating a body to be treated with a plasma of an etching gas, a site of the chamber itself exposed to a plasma forming atmosphere, and a member or parts disposed in the chamber, in which one or more surfaces of the site, member and parts are provided with a composite layer consisting of a porous layer made of a metal oxide and a secondary recrystallized layer of the metal oxide formed on the porous layer.
Dependencies are inferred from the claim text.