Method for producing photovoltaic-grade crystalline silicon by addition of doping impurities and photovoltaic cell
AssigneeApollon Solar
InventorsJed Kraiem, Roland Einhaus, Hubert Lauvray
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AssigneeApollon Solar
InventorsJed Kraiem, Roland Einhaus, Hubert Lauvray
Estimating the term…
Production of photovoltaic grade crystalline silicon is achieved by crystallization of a molten silicon feedstock, the sum of the initial donor doping element and acceptor doping element concentrations whereof is greater than 0.1 ppma, and both the acceptor and donor doping element concentrations whereof are less than 25 ppma. At least a predefined quantity of a doping material having a segregation coefficient of less than 0.1 is added to the feedstock. This addition enables a crystallized silicon to be produced the difference between the donor and acceptor doping profiles whereof is comprised between 0.1 and 5 ppma over at least 50% of the solidified silicon. A silicon presenting a concentration of at least one of the dopants is greater than or equal to 5 ppma and a difference less than or equal to 5 ppma between these two types of dopant is integrated in a photovoltaic cell.
Silicon-based photovoltaic cell wherein the silicon comprises a concentration of donor dopant elements and/or of acceptor dopant elements larger than or equal to 5 ppma, the difference between these two concentrations being less than or equal to 5 ppma.
Method for producing photovoltaic grade crystalline silicon by crystallization of a molten silicon feedstock, method wherein the sum of the initial concentrations of donor dopant elements and acceptor dopant elements in the silicon feedstock is larger than 0.1 ppma, both the acceptor and donor dopant element concentrations being lower than 25 ppma, the method comprises before crystallization of the silicon:
Dependencies are inferred from the claim text.