Photoelectric conversion device and manufacturing method thereof

A photoelectric conversion device, comprising:

• a first electrode;
• a plurality of unit cells each including a semiconductor layer exhibiting a first conductivity type, a semiconductor layer having an effect of photoelectric conversion, and a semiconductor layer exhibiting a second conductivity type;
• and
• a second electrode,
• wherein in at least one of the plurality of unit cells, the semiconductor layer having the effect of photoelectric conversion includes crystal grains, and
• wherein in at least one of the plurality of unit cells, the crystal grains are aligned in a thickness direction of the semiconductor layer having the effect of photoelectric conversion from the semiconductor layer exhibiting the first conductivity type to the semiconductor layer exhibiting the second conductivity type.

A method for manufacturing a photoelectric conversion device, comprising the steps of:

• forming a first electrode;
• forming a unit cell over the first electrode, the unit cell comprising:
• a semiconductor layer exhibiting a first conductivity type;
• a semiconductor layer having an effect of photoelectric conversion over the semiconductor layer exhibiting the first conductivity type, the semiconductor layer includes crystal grains;
• and
• a semiconductor layer exhibiting a second conductivity type over the semiconductor layer having the effect of photoelectric conversion, and
• forming a second electrode over the unit cell,
• wherein the crystal grains are aligned in a thickness direction of the semiconductor layer having the effect of photoelectric conversion from the semiconductor layer exhibiting the first conductivity type to the semiconductor layer exhibiting the second conductivity type.

A method for manufacturing a photoelectric conversion device, comprising the steps of:

• forming a first electrode;
• forming a plurality of unit cells over the first electrode, each of the plurality of unit cells comprising:
• a semiconductor layer exhibiting a first conductivity type;
• a semiconductor layer having an effect of photoelectric conversion over the semiconductor layer exhibiting the first conductivity type;
• and
• a semiconductor layer exhibiting a second conductivity type over the semiconductor layer having the effect of photoelectric conversion, and
• forming a second electrode over the plurality of unit cells,
• wherein in at least one of the plurality of unit cells, the semiconductor layer having the effect of photoelectric conversion includes crystal grains, and
• wherein in at least one of the plurality of unit cells, the crystal grains are aligned in a thickness direction of the semiconductor layer having the effect of photoelectric conversion from the semiconductor layer exhibiting the first conductivity type to the semiconductor layer exhibiting the second conductivity type.