Photovoltaic device and method of manufacturing a photovoltaic device

A photovoltaic device comprising a substrate;

• deposited upon said substrate:
• a first contact layer;
• a second contact layer;
• between said first and second contact layers:
• a first layer stack comprising a first p-doped layer, a first at least substantially intrinsic layer of amorphous hydrogenated silicon and a first n-doped layer;
• a second layer stack comprising a second p-doped layer, a second at least substantially intrinsic layer of microcrystalline hydrogenated silicon and a second n-doped layer;
• wherein the thickness of said first at least substantially intrinsic layer is 210 nm, and the thickness of said second at least substantially intrinsic layer is 1.41 μm.

Method of manufacturing a photovoltaic device, said method comprising the steps of

• providing a substrate on which a first contact layer is deposited;
• depositing thereon in a predetermined sequence:
• a first layer stack by depositing a first p-doped layer, a first at least substantially intrinsic layer of amorphous hydrogenated silicon and a first n-doped layer;
• a second layer stack by depositing a second p-doped layer, a second at least substantially intrinsic layer of microcrystalline hydrogenated silicon and a second n-doped layer;
• depositing a second contact layer;
• wherein depositing is carried out such that the thickness of said first at least substantially intrinsic layer results to be 210 nm, and the thickness of said second at least substantially intrinsic layer results to be 1.41 μm.