Nonvolatile memory device and method for manufacturing same

A method for manufacturing a nonvolatile memory device,

• the device including a stacked body including a first layer, a second layer and a recording layer provided between a first layer and a second layer, the recording layer being capable of reversely changing between a first state and a second state having a resistance higher than a resistance in the first state by a current supplied via the first layer and the second layer,
• the method comprising:
• forming a stacked body including a first layer, a recording layer containing nitrogen, and a second layer;
• and
• changing a content of nitrogen in the recording layer through a side face of the recording layer.

A method for manufacturing a nonvolatile memory device,

• the device including a stacked body including a first layer, a second layer, and a recording layer provided between a first layer and a second layer, the recording layer being capable of reversely changing between a first state and a second state having a resistance higher than a resistance in the first state by a current supplied via the first layer and the second layer,
• the method comprising:
• forming the recording layer on the first layer;
• forming a mask on a major surface of the recording layer;
• introducing nitrogen into a portion of the recording layer not covered with the mask with a nitrogen concentration higher than a nitrogen concentration in a portion of the recording layer covered with the mask;
• forming the second layer on the recording layer;
• and
• patterning the first layer, the recording layer and the second layer to form the stacked body including the portion covered with the mask and the portion not covered with the mask.