Method and arrangement for tempering sic wafers
OwnerUwe Keim, Robert Michael Hartunginventors
Life of this patent
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Abstract
The invention relates to a method and an arrangement for tempering SiC wafers. The invention is to provide a method and an arrangement for tempering SiC wafers for generating a sufficient silicon partial pressure in the processing chamber and while reducing the operating costs. This is achieved in that a source for at least vaporized or gaseous silicon to increase the silicon partial pressure is connected to the processing chamber (2) for receiving at least one wafer (3), wherein said source is a vaporizer (4) having liquefied silicon fragments (11), to which a carrier gas can be supplied, which generates a gas flow via a silicone melt, and the vaporizer (4) is connected via a pipeline (5) to the processing chamber (2) or is disposed therein.
Claims27
Method for annealing SiC-wafers in a high-temperature area, comprising:
- introducing a plurality of SiC-wafers (3) in a process chamber (2) of an annealing oven (1) and generating a vacuum in the process chamber (2),
- simultaneously heating the SiC-wafer (3) to a process temperature of 1600-2000° C., and
- 2000° C. and increasing the Si partial pressure in the atmosphere of the process chamber (2) to a value above the vapor pressure of the silicon bound in the SiC-wafer for a predetermined period of time at a constant process temperature.
6-9. (canceled)
Apparatus for annealing SiC-wafers in a process chamber of an annealing oven in a high-temperature area, comprising a process chamber (2) for receiving at least one wafer (3), the process chamber (2) being connected to a source of at least silicon in vapor or gas form for increasing the silicon partial pressure.
Dependencies are inferred from the claim text.