Plasma processing apparatus and plasma processing method
AssigneeTokyo Electron Limited
InventorChishio Koshimizu
Life of this patent
Estimating the term…
Loading patent…
AssigneeTokyo Electron Limited
InventorChishio Koshimizu
Estimating the term…
An optimum application voltage for reducing deposits on a peripheral portion of a substrate as well as improving a process result in balance is effectively found without changing a height of a focus ring. A plasma processing apparatus includes a focus ring which includes a dielectric ring provided so as to surround a substrate mounting portion of a mounting table and a conductive ring provided on the dielectric ring; a voltage sensor configured to detect a floating voltage of the conductive ring; a DC power supply configured to apply a DC voltage to the conductive ring. An optimum voltage to be applied to the conductive ring is obtained based on a floating voltage actually detected from the conductive ring, and the optimum application voltage is adjusted based on a variation in the actually detected floating voltage for each plasma process.
A plasma processing method for performing a plasma process on a substrate in a plasma processing apparatus which includes a mounting table for mounting thereon the substrate and a focus ring provided on the mounting table so as to surround the substrate,
A plasma processing method for performing a plasma process on a substrate in a plasma processing apparatus which includes a mounting table for mounting thereon the substrate and a focus ring provided on the mounting table so as to surround the substrate,
A plasma processing apparatus for performing a plasma process on a substrate mounted on a mounting table, the apparatus comprising:
Dependencies are inferred from the claim text.