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US 2010/0304570 A1Published application
Etching method and method for manufacturing optical/electronic device using the same
AssigneeMitsubishi Chemical Corporation
InventorsHideyoshi Horie, Takashi Fukada
Life of this patent
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Abstract
Disclosed is a semiconductor etching method whereby a semiconductor layer made of, for example, a Group III-V nitride semiconductor resistant to etching can be etched by a relatively easier process. This etching method comprises forming a metal-fluoride layer 3 at least as a part of an etching mask on the surface of a base structure (1,2); treating the metal-fluoride layer with a liquid; and etching the base structure using the metal-fluoride layer as a mask.
Claims25
1-24. (canceled)
An etching method, comprising:
- forming a solid layer made of a metal fluoride at least as a part of an etching mask on the surface of a base structure;
- treating said solid layer with a liquid;
- and
- etching said base structure using said liquid-treated solid layer as a mask.
1 more element
An etching method, comprising;
- forming a solid layer having an inter-particulate void at least as a part of an etching mask on the surface of a base structure;
- treating said solid layer with a liquid;
- and
- etching said base structure using said liquid-treated solid layer as a mask.
1 more element
Dependencies are inferred from the claim text.