Method of manufacturing a semiconductor device and substrate processing apparatus
AssigneeHitachi Kokusai Electric Inc.
InventorsMasanori SAKAI, Tatsuyuki SAITO
Life of this patent
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Abstract
A TiN film is formed by a first step of forming a TiN intermediate film on a wafer by supplying TiCl4 and NH3 reacting with TiCl4 to the wafer and controlling a processing condition for causing a bonding branch that has not undergone a substitution reaction to remain at a predetermined concentration at a part of TiCl4 and a second step of substituting the bonding branch contained in the TiN intermediate film by supplying H2 to the wafer, the first step and the second step being performed in this order.
Claims10
A method of manufacturing a semiconductor device for forming a metal film, comprising:
- forming a metal intermediate film on a substrate by supplying a Cl-containing metal compound and a reactive gas reacting with the Cl-containing metal compound to the substrate and controlling a processing condition for causing a bonding branch that has not undergone a substitution reaction to remain at a predetermined concentration at a part of the Cl-containing metal compound and
- substituting the bonding branch contained in the metal intermediate film by supplying H2 to the substrate,
- the forming a metal intermediate film and the substituting the bonding branch being performed in this order.
A substrate processing apparatus comprising:
- a processing chamber that accommodates a substrate;
- a heating system that heats the substrate;
- a first gas supply system that supplies a metal compound to the processing chamber;
- a second gas supply system that supplies a reactive gas reacting with the metal compound to the processing chamber;
- a third gas supply system that supplies H2 to the processing chamber;
- an evacuation system that evacuates an atmosphere in the processing chamber;
- and
- a control unit that controls the heating system, the first gas supply system, the second gas supply system, the third gas supply system, and the evacuation system,
- wherein the control unit performs control for forming a metal film by exposing the substrate to the metal compound and the reactive gas while heating the substrate to form a metal intermediate film in which a bonding branch that has not undergone a substitution reaction is caused to remain at a predetermined concentration at a part of the metal compound and subsequently exposing the substrate to H2 for substituting the bonding branch contained in the metal intermediate film.
Dependencies are inferred from the claim text.