Establishing a hydrophobic surface of sensitive low-k dielectrics of microstructure devices by in situ plasma treatment
AssigneeGlobalfoundries Inc.
InventorsDaniel Fischer, Matthias Schaller
Life of this patent
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Abstract
Silicon oxide based low-k dielectric materials may receive superior hydrophobic surface characteristics on the basis of a plasma treatment using hydrogen and carbon containing radicals. For this purpose, the surface of the low-k dielectric material may be exposed to these radicals, at least in one in situ process in combination with another reactive plasma ambient, for instance used for patterning the low-k dielectric material. Consequently, superior surface characteristics may be established or re-established without significantly contributing to product cycle time.
Claims25
A method, comprising:
- forming a silicon, carbon and oxygen containing dielectric material above a substrate of a microstructure device;
- establishing a first plasma ambient in a process environment that is configured to confine a plasma;
- exposing a surface portion of said silicon, carbon and oxygen containing dielectric material to a first type of radicals generated in said first plasma ambient;
- establishing a second plasma ambient based on hydrogen and carbon in said process environment;
- and
- exposing said surface portion of said silicon, carbon and oxygen containing dielectric material to a second type of radicals generated in said second plasma ambient, said second type of radicals providing forming methyl groups in a surface structure on said surface portion.
A method of forming a low-k dielectric material in a microstructure device, the method comprising:
- forming a silicon, carbon and oxygen containing dielectric material above a substrate so as to have a dielectric constant of approximately 3.0 or less, said silicon, carbon and oxygen containing dielectric material having a surface including methyl groups;
- patterning said silicon, carbon and oxygen containing dielectric material by exposing at least a part of said silicon, carbon and oxygen containing dielectric material to a first type of radicals in a process environment configured to confine a plasma ambient;
- and
- exposing an exposed surface area to a second type of radicals in said process environment, said second type of radicals generating methyl groups in said surface.
A method, comprising:
- forming a low-k dielectric material above a substrate of a semiconductor device, said low-k dielectric material comprising silicon and oxygen;
- forming a trench in said low-k dielectric material by performing a plasma assisted etch process in a process chamber;
- generating hydrogen and carbon containing radicals in said process chamber so as to create methyl groups in exposed surface portions of said low-k dielectric material;
- and
- forming a metal line on the basis of said trench.
Dependencies are inferred from the claim text.