Film forming method and substrate processing apparatus

A substrate processing apparatus, comprising:

• a processing chamber in which a film formation is formed on a target substrate;
• a gas supply unit configured to selectively supply at least titanium compound gas, reducing gas and argon gas into the processing chamber;
• a plasma generation unit configured to generate plasma in the processing chamber;
• a temperature adjustment unit configured to adjust a temperature of the target substrate mounted in the processing chamber;
• and
• a control unit configured to control operations of the gas supply unit, the plasma generation unit, and the temperature adjustment unit,
• wherein the control unit performs a titanium silicide film formation step of forming a titanium silicide film on the target substrate by repeating:
• a first step of introducing titanium compound gas into the processing chamber and adsorbing the titanium compound gas onto a surface of the target substrate,
• a second step of stopping introduction of the titanium compound gas into the processing chamber to thereby remove the titanium compound gas remaining in the processing chamber, and
• a third step of generating plasma in the processing chamber while introducing hydrogen gas into the processing chamber to thereby reduce the titanium compound gas adsorbed onto a silicon-containing surface of the target substrate, and of reacting the titanium compound gas with silicon of the silicon-containing surface to thereby form the titanium silicide film, and
• wherein the control unit performs a titanium film formation step of forming a titanium film on the titanium silicide film by repeating:
• a fourth step of generating plasma in the processing chamber while introducing the titanium compound gas and the hydrogen gas into the processing chamber to thereby form the titanium film on the target substrate, and
• a fifth step of stopping introduction of the titanium compound gas into the processing chamber while maintaining the plasma, thus performing plasma annealing on the titanium film.