Method of production of a contact structure
AssigneeAdvantest Corporation
InventorsTetsuya KUITANI, Tadao SAITO, Yoshihiro ABE
Life of this patent
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Abstract
A probe card having a plurality of silicon finger contactors contacting pads provided on a tested semiconductor wafer and a probe board mounting the plurality of silicon finger contactors on its surface, wherein each silicon finger contactor has a base part on which a step difference is formed, a support part with a rear end side provided at the base part and with a front end side sticking out from the base part, and a conductive part formed on the surface of the support part, each silicon finger contactor mounted on the probe board so that an angle part of the step difference formed on the base part contacts the surface of the probe board.
Claims16
A method of production of a contact structure having a contactor and a contact board, the method comprising:
- (a) preparing a SOI wafer;
- (b) forming a step of a base part of the contactor;
- (c) forming a support part of the contactor;
- (d) covering a top surface of the support part with a conductive material so as to form a conductive part of the contactor;
- and
- (e) mounting the contactor on the contact board so that corner parts of the step of the base part contact the surface of the contact board, wherein the (b) includes:
- (b-1) forming a first mask pattern on a bottom surface of the SOI wafer;
- and
- (b-2) etching the bottom surface of the SOI wafer so as to form a step of a base part of the contactor, and
- the (c) includes:
- (c-1) forming a second mask pattern on a top surface of the SOI wafer;
- (c-2) etching the top surface of the SOI wafer;
- (c-3) forming a third mask pattern on the bottom surface of the SOI wafer;
- (c-4) etching the bottom surface of the SOI wafer;
- (c-5) and removing a SiO2 layer of the SOI wafer so as to form a support part of the contactor.
A method of production of a contact structure having a contactor and a contact board, the method comprising:
- (a) preparing a SOI wafer;
- (b) forming a first mask pattern on a bottom surface of the SOI wafer;
- (c) forming a second mask pattern on a top surface of the SOI wafer;
- (d) etching the top surface of the SOI wafer;
- (e) removing the second mask pattern from the top surface of the SOI wafer;
- (f) a SiO2 layer which constitutes an insulation layer is formed on the top surface of the SOI wafer;
- (g) forming a third mask pattern on the bottom surface of the SOI wafer;
- (h) etching the bottom surface of the SOI wafer;
- (i) removing the third mask pattern from the bottom surface of the SOI wafer;
- (j) covering the surface of the insulation layer with a conductive material so as to form a conductive part of the contactor;
- (k) etching the bottom surface so as to form a step of a base part of the contactor;
- (l) removing a SiO2 layer of the SOI wafer together with the first mask pattern so as to form a support part of the contactor;
- and
- (m) mounting the contactor on the contact board so that corner parts of the step of the base part contact the surface of the contact board.
Dependencies are inferred from the claim text.