Production method for semiconductor device

Abstract

In a production method for a semiconductor device relating to the present invention, first, a pattern of a resist film made of organic polymers is formed on a semiconductor substrate. Next, impurity ions with 1×1014 cm−2 or greater of dose amount are implanted into the semiconductor substrate using the resist film pattern as a mask. The resist film pattern mask is removed sequentially through an oxidation treatment, swelling treatment and removal treatment. In the oxidation treatment, a treatment to oxidize a hardened layer formed in a surface portion of the resist film pattern by the ion implantation is implemented. In the swelling treatment, a treatment to swell the organic polymers composing the resist film pattern where the hardened layer has been oxidized using a chemical solution is implemented. In the removal treatment, the swollen resist film pattern is removed using the chemical solution used for the swelling treatment.

Dependencies are inferred from the claim text.