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US 2010/0304553 A1Published application
Method for manufacturing quantum dot
AssigneeHiroshima University
InventorsShin Yokoyama, Yoshiteru Amemiya
Life of this patent
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Abstract
A silicon oxide film (2) comprising an amorphous phase is deposited on a substrate (1) (see a step (b)) by a plasma CVD method using an SiH4 gas and an N2O gas. Subsequently, a sample comprising the silicon oxide film (2)/the substrate (1) is set on an RTA apparatus. The sample (=the silicon oxide film (2)/the substrate (1)) is heat-treated (rapid heating and rapid cooling) (see a step (c)). In this case, a temperature raising rate is 200° C./s, and a temperature in heat treatment is 1000° C.
Claims10
A method manufacturing quantum dots, comprising:
- a first step of setting a quantitative ratio of a second material including a second element to a first material including a first element to a value of not less than a reference value, and depositing a thin film on a substrate;
- a second step of raising a temperature of the thin film deposited at the first step to a preset temperature at a temperature raising rate of not lower than a reference temperature raising rate;
- and
- a third step of heat-treating the thin film at the preset temperature;
- wherein
- the reference value is a quantitative ratio of the second material to the first material when an insulating film including the first and second elements is formed.
3 more elements
Dependencies are inferred from the claim text.