Method and apparatus for manufacturing semiconductor substrate dedicated to semiconductor device, and method and apparatus for manufacturing semiconductor device
AssigneeSumco Corporation
InventorKazunari KURITA
Life of this patent
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Abstract
A method for manufacturing a semiconductor substrate dedicated to a semiconductor device, in which multi-photon absorption is generated in a micro-region inside the semiconductor substrate by condensing laser beams in any micro-region inside the semiconductor substrate, and a gettering sink is formed by changing the crystal structure of only the micro-region.
Claims26
A method for manufacturing a semiconductor substrate dedicated to a semiconductor device, the method comprising:
- a multi-photon absorption process in which a laser beam is incident to one surface of the semiconductor substrate using a laser irradiation apparatus, and the laser beam is condensed into any micro-region of the semiconductor substrate;
- and
- forming a gettering sink by changing a crystal structure of the micro-region through the multi-photon absorption process,
- wherein the gettering sink is formed in a 3-dimensional shape broadening in parallel with one surface of the semiconductor substrate and extending in a thickness direction of the semiconductor substrate.
A method for manufacturing a semiconductor substrate dedicated to a semiconductor device, the method comprising:
- heating the semiconductor substrate in a temperature range greater than or equal to 400° C. and less than or equal to 1000° C.;
- a multi-photon absorption process in which a laser beam is incident to one surface of the heated semiconductor substrate, and the laser beam is condensed into any micro-region of the heated semiconductor substrate;
- and
- forming a gettering sink by changing a crystal structure of the micro-region through the multi-photon absorption process.
An apparatus for manufacturing a semiconductor substrate dedicated to a semiconductor device, the apparatus comprising:
- a laser irradiator that irradiates an ultra-short pulsed-laser beam having a pulse width of 1.0×10−15 to 1.0×10−8 seconds and a wavelength of 300 to 1200 nm onto the semiconductor substrate;
- a stage that mounts a semiconductor substrate;
- and
- a substrate heating unit that heats the semiconductor substrate in a temperature range greater than or equal to 400° C. and less than or equal to 1000° C.
A method for manufacturing a semiconductor substrate dedicated to a semiconductor device, the method comprising:
- a multi-photon absorption process in which laser beams are simultaneously incident to at least two areas on one surface of the semiconductor substrate using a laser irradiation apparatus capable of irradiating laser beams from an irradiation surface along a plurality of optical axes parallel to one another, and the laser beams are condensed into each of a plurality of micro-regions of the semiconductor substrate;
- and
- forming a plurality of gettering sinks by changing crystal structures of the micro-regions through the multi-photon absorption process.
An apparatus for manufacturing a semiconductor device, the apparatus comprising a laser irradiator that irradiates an ultra-short pulsed-laser beam having a pulse width of 1.0×10−15 to 1.0×10−8 seconds and a wavelength of 300 to 1200 nm onto the semiconductor substrate from an irradiation surface along a plurality of optical axes parallel to one another.
Dependencies are inferred from the claim text.